Перегляд за автором "Michailovska, K.V."

Сортувати за: Порядок: Результатів:

  • Controlling the photoluminescence spectra of porous nc-Si–SiOx structures by vapor treatment 
    Dan’ko, V.A.; Bratus, V.Ya.; Indutnyi, I.Z.; Lisovskyy, I.P.; Zlobin, S.O.; Michailovska, K.V.; Shepeliavyi, P.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The effect of HF and H₂O₂ vapor treatment on the spectral composition and intensity of photoluminescence (PL) in porous oblique deposited nc-Si–SiOx structures have been studied using FTIR, electron-spin resonance (EPR) ...
  • Effect of acetone vapor treatment on photoluminescence of porous nc-Si–SiOx nanostructures 
    Indutnyi, I.Z.; Michailovska, K.V.; Min’ko, V.I.; Shepeliavyi, P.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The effect of treatment in saturated acetone vapors on the spectral composition and intensity of photoluminescence (PL) in porous oblique deposited SiOx films is studied. As a result of this treatment followed by ...
  • Nickel-induced enhancement of photoluminescence in nc-Si–SiOx nanostructures 
    Michailovska, K.V.; Indutnyi, I.Z.; Shepeliavyi, P.E.; Dan’ko, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The effect of nickel silicide interlayer on the intensity of photoluminescence (PL) from Si nanoclusters (nc) in normally deposited and obliquely deposited in vacuum SiOx/Ni/Si structures have been studied using spectral ...
  • Polarization conversion effect in obliquely deposited SiOx films 
    Sopinskyy, M.V.; Indutnyi, I.Z.; Michailovska, K.V.; Shepeliavyi, P.E.; Tkach, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Structural anisotropy of the SiOx films and nc-Si-SiOx light emitting nanostructures, prepared by oblique deposition of silicon monoxide in vacuum, has been studied using the polarization conversion (PC) effect. For this ...
  • Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix 
    Michailovska, K.V.; Indutnyi, I.Z.; Kudryavtsev, O.O.; Sopinskyy, M.V.; Shepeliavyi, P.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Investigated in this paper have been polarization properties of photoluminescence in solid and porous nc-Si−SiOx light emitting structures passivated in HF vapor. These structures were produced by thermal vacuum evaporation ...